Buy IRG4BC20S IGBT N-Channel 600V 19Amp


Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 V Emitter-to-Collector Breakdown Voltage 18 V Temperature Coeff. of Breakdown Voltage 0.75 V/°C 1.40 1.6 Collector-to-Emitter Saturation Voltage V 1.44 Gate Threshold Voltage 3.0 6.0 Temperature Coeff. of Threshold Voltage -11 mV/°C Forward Transconductance S 250 Zero Gate Voltage Collector Current 2.0 1000 Gate-to-Emitter Leakage Current ±100 nA

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate – Emitter Charge (turn-on) Gate – Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 6.5 nC VCC = 400V See Fig. 10 15 VGE = 10A, VCC 430 640 VGE 50 0.12 Energy losses include “tail” 2.05 mJ See Fig. = 10A, VCC ns 760 VGE 50 780 Energy losses include “tail” 3.46 mJ See Fig. 7.5 nH Measured 5mm from package 550 VGE 39 pF VCC = 30V See Fig. = 1.0MHz
T Pulse width 80µs; duty factor 0.1%. U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum

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