Features
• Metal TO-72 can package
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
Detailed Specifications
Transistor Polarity | N-Channel |
Drain-Source Voltage (VDS) | 30VDC |
Drain-Gate Voltage (VDG) | 30VDC |
Reverse Gate-Source Voltage (VGSR) | 30VDC |
Forward Gate Current (IGF) | 10mA |
Gate-Source Cut-off Voltage (VGS(off)) | 6VDC |
Gate-Source Voltage (VGS) | 4VDC |
Zero-Gate Voltage Drain Current (IDSS) | 10mA |
Operating Temperature Range | -65 – 150°C |
Power Dissipation (PD) | 300mW |
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