Buy IRG4BC20S IGBT N-Channel 600V 19Amp
₹105.00
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 V Emitter-to-Collector Breakdown Voltage 18 V Temperature Coeff. of Breakdown Voltage 0.75 V/°C 1.40 1.6 Collector-to-Emitter Saturation Voltage V 1.44 Gate Threshold Voltage 3.0 6.0 Temperature Coeff. of Threshold Voltage -11 mV/°C Forward Transconductance S 250 Zero Gate Voltage Collector Current 2.0 1000 Gate-to-Emitter Leakage Current ±100 nA
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate – Emitter Charge (turn-on) Gate – Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 6.5 nC VCC = 400V See Fig. 10 15 VGE = 10A, VCC 430 640 VGE 50 0.12 Energy losses include “tail” 2.05 mJ See Fig. = 10A, VCC ns 760 VGE 50 780 Energy losses include “tail” 3.46 mJ See Fig. 7.5 nH Measured 5mm from package 550 VGE 39 pF VCC = 30V See Fig. = 1.0MHz
T Pulse width 80µs; duty factor 0.1%. U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
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Features
Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs
VCES = 100°C ICM ILM VGE EARV 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, or M3 screw.
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
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